Quantum Transport Modeling

Quantum Transport Modeling

Quantum transport modeling allows us to study nanoscale transistors taking into account quantum mechanical effects such as confinement and tunneling in a rigorous manner. We use the Non-Equilibrium Green’s Function (NEGF) formalism to study ultra-scaled devices made from materials such as conventional silicon and III-V semiconductors, layer transistion metal dichalogenides, graphene, and other 2D material systems for logic transistor and spintronic applications. Our simulation capabilities range from simplified models we have developed to efficiently compute device characteristics to large-scale parallel simulations that scale to hundreds of CPU cores.