|
2022
|
|
| J175. |
“Logically synthesized and hardware-accelerated restricted Boltzmann machines for combinatorial optimization and integer factorization”
Saavan Patel and Philip Canoza and Sayeef Salahuddin
Nature Electronics, 5, 92-101, 2022.
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| J174. |
“One nanometer HfO2-based ferroelectric tunnel junctions on silicon”
Suraj S Cheema and Nirmaan Shanker and Cheng-Hsiang Hsu and Adhiraj Datar and Jongho Bae and Daewoong Kwon and Sayeef Salahuddin
Advanced Electronic Materials, 8, 2100499, 2022.
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| J173. |
“RKKY Exchange Bias Mediated Ultrafast All-Optical Switching of a Ferromagnet”
Jyotirmoy Chatterjee and Debanjan Polley and Akshay Pattabi and Hyejin Jang and Sayeef Salahuddin and Jeffrey Bokor
Advanced Functional Materials, 32, 2107490, 2022.
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| J172. |
“Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs”
Michael Hoffmann and Ava Jiang Tan and Nirmaan Shanker and Yu-Hung Liao and Li-Chen Wang and Jong-Ho Bae and Chenming Hu and Sayeef Salahuddin
IEEE Electron Device Letters, 43, 717-720, 2022.
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| J171. |
“Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors”
Suraj S Cheema and Nirmaan Shanker and Li-Chen Wang and Cheng-Hsiang Hsu and Shang-Lin Hsu and Yu-Hung Liao and Matthew San Jose and Jorge Gomez and Wriddhi Chakraborty and Wenshen Li and others
Nature, 604, 65-71, 2022.
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| J170. |
“Innovating at Speed and at Scale: A Next Generation Infrastructure for Accelerating Semiconductor Technologies”
Richard A Gottscho and Edlyn V Levine and Tsu-Jae King Liu and Paul C McIntyre and Subhasish Mitra and Boris Murmann and Jan M Rabaey and Sayeef Salahuddin and Willy C Shih and H-S Philip Wong
arXiv preprint arXiv:2204.02216, 2022.
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| J169. |
“Accelerated Ultrafast Magnetization Dynamics at Graphene/CoGd Interfaces”
Sucheta Mondal and Yuxuan Lin and Debanjan Polley and Cong Su and Alex Zettl and Sayeef Salahuddin and Jeffrey Bokor
ACS nano, 16, 9620-9630, 2022.
|
| J168. |
“A Compact Model of Nanoscale Ferroelectric Capacitor”
Chien-Ting Tung and Girish Pahwa and Sayeef Salahuddin and Chenming Hu
IEEE Transactions on Electron Devices, 69, 4761-4764, 2022.
|
| C70. |
“On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO 2-ZrO 2 Superlattice Gate Stack on L g= 90 nm nFETs”
Nirmaan Shanker and Li-Chen Wang and Suraj Cheema and Wenshen Li and Nilotpal Choudhury and Chenming Hu and Souvik Mahapatra and Sayeef Salahuddin
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 421-422, 2022.
|
| J167. |
“Critical Importance of Nonuniform Polarization and Fringe Field Effects for Scaled Ferroelectric FinFET Memory”
Girish Pahwa and Sayeef Salahuddin and Chenming Hu
IEEE Transactions on Electron Devices, 2022.
|
|
2021
|
|
| J166. |
“Unifying femtosecond and picosecond single-pulse magnetic switching in Gd-Fe-Co”
Florian Jakobs and T A Ostler and C-H Lambert and Yang Yang and Sayeef Salahuddin and Richard B Wilson and Jon Gorchon and Jeffrey Bokor and Unai Atxitia
Physical Review B, 103, 104422, 2021.
|
| J165. |
“Local negative permittivity and topological phase transition in polar skyrmions”
Sujit Das and Zijian Hong and V A Stoica and M A P Gonçalves and Yu-Tsun Shao and Eric Parsonnet and Eric J Marksz and Sahar Saremi and M R McCarter and A Reynoso and others
Nature materials, 20, 194-201, 2021.
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| J164. |
“Novel Spin–Orbit Torque Generation at Room Temperature in an All-Oxide Epitaxial La0. 7Sr0. 3MnO3/SrIrO3 System”
Xiaoxi Huang and Shehrin Sayed and Joseph Mittelstaedt and Sandhya Susarla and Saba Karimeddiny and Lucas Caretta and Hongrui Zhang and Vladimir A Stoica and Tanay Gosavi and Farzad Mahfouzi and others
Advanced Materials, 33, 2008269, 2021.
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| J163. |
“Electric field-induced permittivity enhancement in negative-capacitance fet”
Yu-Hung Liao and Daewoong Kwon and Suraj Cheema and Nirmaan Shanker and Ava J Tan and Ming-Yen Kao and Li-Chen Wang and Chenming Hu and Sayeef Salahuddin
IEEE Transactions on Electron Devices, 68, 1346-1351, 2021.
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| J162. |
“Epitaxial ferroelectric Hf0. 5Zr0. 5O2 with metallic pyrochlore oxide electrodes”
Zimeng Zhang and Shang-Lin Hsu and Vladimir A Stoica and Hanjong Paik and Eric Parsonnet and Alexander Qualls and Jianjun Wang and Liang Xie and Mukesh Kumari and Sujit Das and others
Advanced materials, 33, 2006089, 2021.
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| J161. |
“Energy Storage and Reuse in Negative Capacitance”
Ming-Yen Kao and Yu-Hung Liao and Girish Pahwa and Avirup Dasgupta and Sayeef Salahuddin and Chenming Hu
IEEE Transactions on Electron Devices, 68, 1861-1865, 2021.
|
| J160. |
“Ferroelectric HfO 2 memory transistors with high-κ interfacial layer and write endurance exceeding 10 10 cycles”
Ava Jiang Tan and Yu-Hung Liao and Li-Chen Wang and Nirmaan Shanker and Jong-Ho Bae and Chenming Hu and Sayeef Salahuddin
IEEE Electron Device Letters, 42, 994-997, 2021.
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| J159. |
“Negative capacitance enables GAA scaling VDD to 0.5 V”
Ming-Yen Kao and Sayeef Salahuddin and Chenming Hu
Solid-State Electronics, 181, 108010, 2021.
|
| C69. |
“Ultrathin Ferroelectricity and Its Application in Advanced Logic and Memory Devices”
Sayeef Salahuddin
2021 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2021.
|
| J158. |
“Unified framework for charge-spin interconversion in spin-orbit materials”
Shehrin Sayed and Seokmin Hong and Xiaoxi Huang and Lucas Caretta and Arnoud S Everhardt and Ramamoorthy Ramesh and Sayeef Salahuddin and Supriyo Datta
Physical Review Applied, 15, 54004, 2021.
|
| J157. |
“Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures”
Girish Pahwa and Pragya Kushwaha and Avirup Dasgupta and Sayeef Salahuddin and Chenming Hu
IEEE Transactions on Electron Devices, 68, 4223-4230, 2021.
|
| J156. |
“Atomic scale understanding of the electronic structure of 5d-3d perovskite oxide heterostructures using STEM-EELS.”
Sandhya Susarla and Xiaoxi Huang and Shehrin Sayed and Lucas Caretta and Hongrui Zhang and Sayeef Salahuddin and Peter Ercius and Ramamoorthy Ramesh
Microscopy and Microanalysis, 27, 356-358, 2021.
|
| J155. |
“A compact model of polycrystalline ferroelectric capacitor”
Chien-Ting Tung and Girish Pahwa and Sayeef Salahuddin and Chenming Hu
IEEE Transactions on Electron Devices, 68, 5311-5314, 2021.
|
| J154. |
“A voltage-controlled gain cell magnetic memory”
Shehrin Sayed and Cheng-Hsiang Hsu and Sayeef Salahuddin
IEEE Electron Device Letters, 42, 1452-1455, 2021.
|
| J153. |
“Double-peaked resonance in harmonic-free acoustically driven ferromagnetic resonance”
Adi Jung and Dorotea Macri and Samuel Margueron and Ausrine Bartasyte and Sayeef Salahuddin
Applied Physics Letters, 119, 142403, 2021.
|
| J152. |
“Large Injection Velocities in Highly Scaled, Fully Depleted Silicon on Insulator Transistors”
Yu-Hung Liao and Khandker Akif Aabrar and Wriddhi Chakraborty and Wenshen Li and Suman Datta and Sayeef Salahuddin
IEEE Electron Device Letters, 43, 184-187, 2021.
|
| C68. |
“Towards the Integration of Hf 0.8 Zr 0.2 O 2-based Negative Capacitance Dielectrics on \beta -Ga 2 O 3 Substrates”
Guillermo A Salcedo and Ahmad E Islam and Michael K Dietz and Suraj Cheema and Kevin D Leedy and Kyle J Liddy and Andrew J Green and Weisong Wang and Sayeef Salahuddin and Kelson D Chabak and others
NAECON 2021-IEEE National Aerospace and Electronics Conference, 7-11, 2021.
|
| C67. |
“Demonstration of Low EOT Gate Stack and Record Transconductance on L_ \\mathrm \g\\= 90 nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 Superlattice”
W Li and L C Wang and S S Cheema and N Shanker and J H Park and Y H Liao and S L Hsu and C H Hsu and S Volkman and U Sikder and others
2021 IEEE International Electron Devices Meeting (IEDM), 13-16, 2021.
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| C66. |
“FeFETs for Near-Memory and In-Memory Compute”
Saveef Salahuddin and Ava Tan and Suraj Cheema and Nirmaan Shanker and Michael Hoffmann and J-H Bae
2021 IEEE International Electron Devices Meeting (IEDM), 14-19, 2021.
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2020
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| J151. |
“Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film”
Saidur R Bakaul and Jaegyu Kim and Seungbum Hong and Mathew J Cherukara and Tao Zhou and Liliana Stan and Claudy R Serrao and Sayeef Salahuddin and Amanda K Petford-Long and Dillon D Fong and others
Advanced Materials, 32, 1907036, 2020.
|
| C65. |
“Electric-field control of the interlayer exchange coupling”
Shehrin Sayed and Cheng-Hsiang Hsu and Niklas Roschewsky and See-Hun Yang and Sayeef Salahuddin
American Physical Society (March Meeting), 2020.
|
| J150. |
“Spin-orbit torque generated by amorphous Fe _ \x\ Si _ \1-x\”
Cheng-Hsiang Hsu and Julie Karel and Niklas Roschewsky and Suraj Cheema and Dinah Simone Bouma and Shehrin Sayed and Frances Hellman and Sayeef Salahuddin
arXiv preprint arXiv:2006.07786, 2020.
|
| J149. |
“Tunable magnetoelastic effects in voltage-controlled exchange-coupled composite multiferroic microstructures”
Zhuyun Xiao and Roberto Lo Conte and Maite Goiriena-Goikoetxea and Rajesh V Chopdekar and C-HA Lambert and Xiang Li and A T N’Diaye and P Shafer and S Tiwari and A Barra and others
ACS applied materials & interfaces, 12, 6752-6760, 2020.
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| J148. |
“Fully transparent field-effect transistor with high drain current and on-off ratio”
Jisung Park and Hanjong Paik and Kazuki Nomoto and Kiyoung Lee and Bo-Eun Park and Benjamin Grisafe and Li-Chen Wang and Sayeef Salahuddin and Suman Datta and Yongsung Kim and others
APL Materials, 8, 11110, 2020.
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| J147. |
“Tunneling electroresistance effects in epitaxial complex oxides on silicon”
Mohammad Abuwasib and Claudy R Serrao and Liliana Stan and Sayeef Salahuddin and Saidur Rahman Bakaul
Applied Physics Letters, 116, 32902, 2020.
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| J146. |
“BSIM compact model of quantum confinement in advanced nanosheet FETs”
Avirup Dasgupta and Shivendra Singh Parihar and Pragya Kushwaha and Harshit Agarwal and Ming-Yen Kao and Sayeef Salahuddin and Yogesh Singh Chauhan and Chenming Hu
IEEE Transactions on Electron Devices, 67, 730-737, 2020.
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| J145. |
“A density metric for semiconductor technology [point of view]”
H-S Philip Wong and Kerem Akarvardar and Dimitri Antoniadis and Jeffrey Bokor and Chenming Hu and Tsu-Jae King-Liu and Subhasish Mitra and James D Plummer and Sayeef Salahuddin
Proceedings of the IEEE, 108, 478-482, 2020.
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| J144. |
“Enhanced ferroelectricity in ultrathin films grown directly on silicon”
Suraj S Cheema and Daewoong Kwon and Nirmaan Shanker and Roberto Dos Reis and Shang-Lin Hsu and Jun Xiao and Haigang Zhang and Ryan Wagner and Adhiraj Datar and Margaret R McCarter and others
Nature, 580, 478-482, 2020.
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| C64. |
“BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion”
H Agarwal and P Kushwaha and Avirup Dasgupta and M Y-Kao and T Morshed and G Workman and K Shanbhag and X Li and V Vinothkumar and Y S Chauhan and others
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020.
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| C63. |
“Reliability of ferroelectric HfO 2-based memories: From MOS capacitor to FeFET”
Ava J Tan and Li-Chen Wang and Yu-Hung Liao and Jong-Ho Bae and Chenming Hu and Sayeef Salahuddin
2020 Device Research Conference (DRC), 1-2, 2020.
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| C62. |
“GC-eDRAM design using hybrid FinFET/NC-FinFET”
Ramin Rajaei and Yen-Kai Lin and Sayeef Salahuddin and Michael Niemier and X Sharon Hu
Proceedings of the ACM/IEEE International Symposium on Low Power Electronics and Design, 199-204, 2020.
|
| J143. |
“Ising model optimization problems on a FPGA accelerated restricted Boltzmann machine”
Saavan Patel and Lili Chen and Philip Canoza and Sayeef Salahuddin
arXiv preprint arXiv:2008.04436, 2020.
|
| J142. |
“Analysis and modeling of polarization gradient effect on negative capacitance FET”
Ming-Yen Kao and Girish Pahwa and Avirup Dasgupta and Sayeef Salahuddin and Chenming Hu
IEEE Transactions on Electron Devices, 67, 4521-4525, 2020.
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| J141. |
“Resonant enhancement of exchange coupling for voltage-controlled magnetic switching”
Shehrin Sayed and Cheng-Hsiang Hsu and Niklas Roschewsky and See-Hun Yang and Sayeef Salahuddin
Physical Review Applied, 14, 34070, 2020.
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| J140. |
“Design optimization techniques in nanosheet transistor for RF applications”
Pragya Kushwaha and Avirup Dasgupta and Ming-Yen Kao and Harshit Agarwal and Sayeef Salahuddin and Chenming Hu
IEEE Transactions on Electron Devices, 67, 4515-4520, 2020.
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| C61. |
“Dynamic memory and sequential logic design using negative capacitance finfets”
Ramin Rajaei and Yen-Kai Lin and Sayeef Salahuddin and Michael Niemier and Xiaobo Sharon Hu
2020 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2020.
|
| J139. |
“Electric-field control of spin dynamics during magnetic phase transitions”
Tianxiang Nan and Yeonbae Lee and Shihao Zhuang and Zhongqiang Hu and James D Clarkson and Xinjun Wang and Changhyun Ko and HwanSung Choe and Zuhuang Chen and David Budil and others
Science advances, 6, eabd2613, 2020.
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| J138. |
“Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors”
Jong-Ho Bae and Daewoong Kwon and Namho Jeon and Suraj Cheema and Ava Jiang Tan and Chenming Hu and Sayeef Salahuddin
IEEE Electron Device Letters, 41, 1637-1640, 2020.
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| C60. |
“Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs”
Ava J Tan and Milan Pešić and Luca Larcher and Yu-Hung Liao and Li-Chen Wang and Jong-Ho Bae and Chenming Hu and Sayeef Salahuddin
2020 IEEE Symposium on VLSI Technology, 1-2, 2020.
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2019
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| J137. |
“Spatially resolved steady-state negative capacitance”
Ajay K. Yadav and Kayla X. Nguyen and Zijian Hong and Pablo García-Fernández and Pablo Aguado-Puente and Christopher T. Nelson and Sujit Das and Bhagawati Prasad and Daewoong Kwon and Suraj Cheema and Asif I. Khan and Chenming Hu and Jorge Íñiguez and Javier Junquera and Long-Qing Chen and David A. Muller and Ramamoorthy Ramesh and Sayeef Salahuddin
Nature, 565, 468-471, 2019.
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| J136. |
“Proposal for Capacitance Matching in Negative Capacitance Field Effect Transistors”
H Agarwal and P Kushwaha and Y Lin and M Kao and Y Liao and A Dasgupta and S Salahuddin and C Hu
IEEE Electron Device Letters, 1, 2019.
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| J135. |
“A Spin-Orbit-Torque Memristive Device”
Shuai Zhang and Shijiang Luo and Nuo Xu and Qiming Zou and Min Song and Jijun Yun and Qiang Luo and Zhe Guo and Ruofan Li and Weicheng Tian and Xin Li and Hengan Zhou and Huiming Chen and Yue Zhang and Xiaofei Yang and Wanjun Jiang and Ka Shen and Jeongmin Hong and Zhe Yuan and Li Xi and Ke Xia and Sayeef Salahuddin and Bernard Dieny and Long You
Advanced Electronic Materials, 1800782, 2019.
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| J134. |
“Ultrafast magnetization switching in nanoscale magnetic dots”
Amal El-Ghazaly and Brandon Tran and Alejandro Ceballos and Charles-Henri Lambert and Akshay Pattabi and Sayeef Salahuddin and Frances Hellman and Jeffrey Bokor
Applied Physics Letters, 114, 232407, 2019.
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| J133. |
“Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs”
Yen-Kai Lin and Harshit Agarwal and Pragya Kushwaha and Ming-Yen Kao and Yu-Hung Liao and Korok Chatterjee and Sayeef Salahuddin and Chenming Hu
IEEE Transactions on Electron Devices, 66, 2023-2027, 2019.
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| J132. |
“Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO 2 Oxide”
Daewoong Kwon and Suraj Cheema and Nirmaan Shanker and Korok Chatterjee and Yu-Hung Liao and Ava J Tan and Chenming Hu and Sayeef Salahuddin
IEEE Electron Device Letters, 40, 993-996, 2019.
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| J131. |
“Spacer Engineering in Negative Capacitance FinFETs”
Yen-Kai Lin and Harshit Agarwal and Ming-Yen Kao and Jiuren Zhou and Yu-Hung Liao and Avirup Dasgupta and Pragya Kushwaha and Sayeef Salahuddin and Chenming Hu
IEEE Electron Device Letters, 40, 1009-1012, 2019.
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| J130. |
“Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel”
Ming-Yen Kao and Yen-Kai Lin and Harshit Agarwal and Yu-Hung Liao and Pragya Kushwaha and Avirup Dasgupta and Sayeef Salahuddin and Chenming Hu
IEEE Electron Device Letters, 40, 822-825, 2019.
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| J129. |
“Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node”
Pragya Kushwaha and Harshit Agarwal and Yen-Kai Lin and Avirup Dasgupta and Ming-Yen Kao and Ye Lu and Yun Yue and Xiaonan Chen and Joseph Wang and Wing Sy and Frank Yang and PR. Chidi Chidambaram and Sayeef Salahuddin and Chenming Hu
IEEE Electron Device Letters, 40, 985-988, 2019.
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| J128. |
“Challenges to Partial Switching of Hf0. 8Zr0. 2O2 Gated Ferroelectric FET for Multilevel/Analog or Low Voltage Memory Operation”
Korok Chatterjee and Sangwan Kim and Golnaz Karbasian and Daewoong Kwon and Ava J Tan and Ajay K Yadav and Claudy R Serrao and Chenming Hu and Sayeef Salahuddin
IEEE Electron Device Letters, 2019.
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| J127. |
“Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures”
Niklas Roschewsky and Emily S Walker and Praveen Gowtham and Sarah Muschinske and Frances Hellman and Seth R Bank and Sayeef Salahuddin
Physical Review B, 99, 195103, 2019.
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| J126. |
“BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect”
H Agarwal and C Gupta and R Goel and P Kushwaha and Y-K Lin and M-Y Kao and J-P Duarte and H-L Chang and Y S Chauhan and S Salahuddin and others
IEEE Transactions on Electron Devices, 66, 4258-4263, 2019.
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| J125. |
“Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching”
Shehrin Sayed and Cheng-Hsiang Hsu and Niklas Roschewsky and See-Hun Yang and Sayeef Salahuddin
arXiv preprint arXiv:1911.00183, 2019.
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| J124. |
“Generation and stability of structurally imprinted target skyrmions in magnetic multilayers”
Noah Kent and Robert Streubel and Charles-Henri Lambert and Alejandro Ceballos and Soong-Gun Je and Scott Dhuey and Mi-Young Im and Felix Büttner and Frances Hellman and Sayeef Salahuddin and others
Applied Physics Letters, 115, 112404, 2019.
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| J123. |
“Experimental Demonstration of a Ferroelectric HfO 2-Based Content Addressable Memory Cell”
Ava J Tan and Korok Chatterjee and Jiuren Zhou and Daewoong Kwon and Yu-Hung Liao and Suraj Cheema and Chenming Hu and Sayeef Salahuddin
IEEE Electron Device Letters, 41, 240-243, 2019.
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| C59. |
“Electric-field controlled magnetic reorientation in exchange coupled CoFeB/Ni bilayer microstructures”
Zhuyun Xiao and Roberto Lo Conte and Maite Goiriena and Rajesh V Chopdekar and Xiang Li and Sidhant Tiwari and Charles-Henri Lambert and Sayeef Salahuddin and Gregory P Carman and Kang Wang and others
Journal of Physics: Conference Series, 1407, 12024, 2019.
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| J122. |
“Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors”
Yu-Hung Liao and Daewoong Kwon and Yen-Kai Lin and Ava J Tan and Chenming Hu and Sayeef Salahuddin
IEEE Electron Device Letters, 40, 1860-1863, 2019.
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| J121. |
“Near Threshold Capacitance Matching in a Negative Capacitance FET with 1 nm Effective Oxide Thickness Gate Stack”
Daewoong Kwon and Suraj Cheema and Yen-Kai Lin and Yu-Hung Liao and Korok Chatterjee and Ava J Tan and Chenming Hu and Sayeef Salahuddin
IEEE Electron Device Letters, 41, 179-182, 2019.
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| J120. |
“Micromagnetic analysis and optimization of spin-orbit torque switching processes in synthetic antiferromagnets”
E A Tremsina and N Roschewsky and S Salahuddin
Journal of Applied Physics, 126, 163905, 2019.
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| J119. |
“Combining Learned Representations for Combinatorial Optimization”
Saavan Patel and Sayeef Salahuddin
arXiv preprint arXiv:1909.03978, 2019.
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| J118. |
“Memristors: A Spin–Orbit-Torque Memristive Device (Adv. Electron. Mater. 4/2019)”
Shuai Zhang and Shijiang Luo and Nuo Xu and Qiming Zou and Min Song and Jijun Yun and Qiang Luo and Zhe Guo and Ruofan Li and Weicheng Tian and others
Advanced Electronic Materials, 5, 1970022, 2019.
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| C58. |
“Ferroelectric Si-doped HfO 2 Capacitors for Next-Generation Memories”
Ava J Tan and Zhongwei Zhu and Hwan Sung Choe and Chenming Hu and Sayeef Salahuddin and Alex Yoon
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 1-2, 2019.
|
| J117. |
“Tapia: U: Your story recorded in a magnet: Micromagnetic simulations of spin-orbit torque in multi-layer structures”
Elizaveta Tremsina and S Salahuddin
2018–2019 ACM Student Research Competition, 2019.
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2018
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| J116. |
“Ferroelectric negative capacitance domain dynamics”
Michael Hoffmann and Asif Islam Khan and Claudy Serrao and Zhongyuan Lu and Sayeef Salahuddin and Milan Pešić and Stefan Slesazeck and Uwe Schroeder and Thomas Mikolajick
Journal of Applied Physics, 123, 184101, 2018.
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| J115. |
“Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS 2 transistor”
Zhongyuan Lu and Claudy Serrao and Asif I. Khan and James D. Clarkson and Justin C. Wong and Ramamoorthy Ramesh and Sayeef Salahuddin
Applied Physics Letters, 112, 043107, 2018.
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| J114. |
“Electrically controlled switching of the magnetization state in multiferroic BaTi O 3 / CoFe submicrometer structures”
R. Lo Conte and J. Gorchon and A. Mougin and C. H. A. Lambert and A. El-Ghazaly and A. Scholl and S. Salahuddin and J. Bokor
Physical Review Materials, 2, 091402, 2018.
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| J113. |
“Experimental Evidence of Chiral Ferrimagnetism in Amorphous GdCo Films”
Robert Streubel and Charles Henri Lambert and Noah Kent and Peter Ercius and Alpha T. N’Diaye and Colin Ophus and Sayeef Salahuddin and Peter Fischer
Advanced Materials, 2018.
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| C57. |
“Effect of Polycrystallinity and Presence of Dielectric Phases on NC-FinFET Variability”
Y Lin and M Kao and H Agarwal and Y Liao and P Kushwaha and K Chatterjee and J P Duarte and H Chang and S Salahuddin and C Hu
2018 IEEE International Electron Devices Meeting (IEDM), 9.4.1-9.4.4, 2018.
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| C56. |
“Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect”
H Zhou and D Kwon and A B Sachid and Y Liao and K Chatterjee and A J Tan and A K Yadav and C Hu and S Salahuddin
2018 IEEE Symposium on VLSI Technology, 53-54, 2018.
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| C55. |
“Scaling of all-optical switching to nanometer dimensions”
A ElGhazaly and C Lambert and B Tran and A Pattabi and J Gorchon and S Salahuddin and H Wong and J Bokor
2018 IEEE International Magnetics Conference (INTERMAG), 1-2, 2018.
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| J112. |
“One-Dimensional Spin Channel in Two-Dimensional Transition Metal Dichalcogenide Heterostructures”
V Mishra and S Salahuddin
IEEE Transactions on Nanotechnology, 17, 1053-1057, 2018.
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| J111. |
“Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ION/IOFF Sensitivity in Presence of Parasitic Capacitance”
H Agarwal and P Kushwaha and J P Duarte and Y Lin and A B Sachid and H Chang and S Salahuddin and C Hu
IEEE Transactions on Electron Devices, 65, 1211-1216, 2018.
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| J110. |
“Multidomain Phase-Field Modeling of Negative Capacitance Switching Transients”
S Smith and K Chatterjee and S Salahuddin
IEEE Transactions on Electron Devices, 65, 295-298, 2018.
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| J109. |
“Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic Functions”
X Li and M Song and N Xu and S Luo and Q Zou and S Zhang and J Hong and X Yang and T Min and X Han and X Zou and J Zhu and S Salahuddin and L You
IEEE Transactions on Electron Devices, 65, 4687-4693, 2018.
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| J108. |
“Modeling of Advanced RF Bulk FinFETs”
P Kushwaha and H Agarwal and Y -. Lin and M -. Kao and J -. Duarte and H -. Chang and W Wong and J Fan and and Y. S. Chauhan and S Salahuddin and C Hu
IEEE Electron Device Letters, 39, 791-794, 2018.
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| J107. |
“New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs”
Y Lin and P Kushwaha and J P Duarte and H Chang and H Agarwal and S Khandelwal and A B Sachid and M Harter and J Watts and Y S Chauhan and S Salahuddin and C Hu
IEEE Transactions on Electron Devices, 65, 463-469, 2018.
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| C54. |
“Negative capacitance transistors”
S Salahuddin
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 1, 2018.
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| J106. |
“Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor”
M Kao and A B Sachid and Y Lin and Y Liao and H Agarwal and P Kushwaha and J P Duarte and H Chang and S Salahuddin and C Hu
IEEE Transactions on Electron Devices, 65, 4652-4658, 2018.
|
| J105. |
“NCFET Design Considering Maximum Interface Electric Field”
H Agarwal and P Kushwaha and Y Lin and M Kao and Y Liao and J Duarte and S Salahuddin and C Hu
IEEE Electron Device Letters, 39, 1254-1257, 2018.
|
| C53. |
“Response Speed of Negative Capacitance FinFETs”
D Kwon and Y Liao and Y Lin and J P Duarte and K Chatterjee and A J Tan and A K Yadav and C Hu and Z Krivokapic and S Salahuddin
2018 IEEE Symposium on VLSI Technology, 49-50, 2018.
|
| J104. |
“Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors”
D Kwon and K Chatterjee and A J Tan and A K Yadav and H Zhou and A B Sachid and R D Reis and C Hu and S Salahuddin
IEEE Electron Device Letters, 39, 300-303, 2018.
|
| J103. |
“Engineering Negative Differential Resistance in NCFETs for Analog Applications”
H Agarwal and P Kushwaha and J P Duarte and Y Lin and A B Sachid and M Kao and H Chang and S Salahuddin and C Hu
IEEE Transactions on Electron Devices, 65, 2033-2039, 2018.
|
| C52. |
“Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation”
J P Duarte and Y -. Lin and Y -. Liao and A Sachid and M -. Kao and H Agarwal and P Kushwaha and K Chatterjee and D Kwon and H -. Chang and S Salahuddin and C Hu
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 123-128, 2018.
|
| J102. |
“A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology”
A J Tan and A K Yadav and K Chatterjee and D Kwon and S Kim and C Hu and S Salahuddin
IEEE Electron Device Letters, 39, 95-98, 2018.
|
| C51. |
“Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft”
K Li and Y Wei and Y Chen and W Chiu and H Chen and M Lee and Y Chiu and F Hsueh and B Wu and P Chen and T Lai and C Chen and J Shieh and W Yeh and S Salahuddin and C Hu
2018 IEEE International Electron Devices Meeting (IEDM), 31.7.1-31.7.4, 2018.
|
| J101. |
“Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors”
S Smith and J Llinus and J Bokor and S Salahuddin
IEEE Electron Device Letters, 39, 143-146, 2018.
|
| C50. |
“Scaling of all-optical switching to nanometer dimensions”
A. ElGhazaly and C. Lambert and B. Tran and A. Pattabi and J. Gorchon and S. Salahuddin and H. Wong and J. Bokor
2018 IEEE International Magnetics Conference (INTERMAG), 1-2, 2018.
|
| J100. |
“Mapping Polarity, Toroidal Order, and the Local Energy Landscape by 4D-STEM”
Kayla X Nguyen and Yi Jiang and Michael C. Cao and Prafull Purohit and Ajay K. Yadav and Javier Junquera and Mark W. Tate and Sol M. Gruner and Ramamoorthy Ramesh and Sayeef Salahuddin and David A. Muller
Microscopy and Microanalysis, 24, 176-177, 2018.
|
| C49. |
“Negative Capacitance Transistors”
Sayeef Salahuddin
Meeting Abstracts of ECS, MA2018-01, 1367-1367, 2018.
|
| J99. |
“In situ ferromagnetic resonance capability on a polarized neutron reflectometry beamline”
Mikhail Kostylev and Grace L. Causer and Charles-Henri Lambert and Thomas Schefer and Charles Weiss and Sara J. Callori and Sayeef Salahuddin and Xiaolin L. Wang and Frank Klose and IUCr
Journal of Applied Crystallography, 51, 9-16, 2018.
|
| J98. |
“Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS 2 transistor”
Zhongyuan Lu and Claudy Serrao and Asif I. Khan and James D. Clarkson and Justin C. Wong and Ramamoorthy Ramesh and Sayeef Salahuddin
Applied Physics Letters, 112, 043107, 2018.
|
| J97. |
“Voltage-driven, local, and efficient excitation of nitrogen-vacancy centers in diamond”
Dominic Labanowski and Vidya Praveen Bhallamudi and Qiaochu Guo and Carola M Purser and Brendan A McCullian and P Chris Hammel and Sayeef Salahuddin
Science Advances, 4, eaat6574, 2018.
|
|
2017
|
|
| J96. |
“Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers”
Jon Gorchon and Charles-Henri Lambert and Yang Yang and Akshay Pattabi and Richard B. Wilson and Sayeef Salahuddin and Jeffrey Bokor
Applied Physics Letters, 111, 042401, 2017.
|
| J95. |
“Spin wave generation by surface acoustic waves”
Xu Li and Dominic Labanowski and Sayeef Salahuddin and Christopher S. Lynch
Journal of Applied Physics, 122, 043904, 2017.
|
| J94. |
“Stabilization of ferroelectric phase in tungsten capped Hf 0.8 Zr 0.2 O 2 ”
Golnaz Karbasian and Roberto dos Reis and Ajay K. Yadav and Ava J. Tan and Chenming Hu and Sayeef Salahuddin
Applied Physics Letters, 111, 022907, 2017.
|
| J93. |
“Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers”
Jon Gorchon and Charles-Henri Lambert and Yang Yang and Akshay Pattabi and Richard B. Wilson and Sayeef Salahuddin and Jeffrey Bokor
Applied Physics Letters, 111, 042401, 2017.
|
| J92. |
“Nonvolatile MoS 2 field effect transistors directly gated by single crystalline epitaxial ferroelectric”
Zhongyuan Lu and Claudy Serrao and Asif Islam Khan and Long You and Justin C. Wong and Yu Ye and Hanyu Zhu and Xiang Zhang and Sayeef Salahuddin
Applied Physics Letters, 111, 023104, 2017.
|
| J91. |
“Differential voltage amplification from ferroelectric negative capacitance”
Asif I. Khan and Michael Hoffmann and Korok Chatterjee and Zhongyuan Lu and Ruijuan Xu and Claudy Serrao and Samuel Smith and Lane W. Martin and Chenming Hu and Ramamoorthy Ramesh and Sayeef Salahuddin
Applied Physics Letters, 111, 253501, 2017.
|
| J90. |
“Spin-orbit torque switching of ultralarge-thickness ferrimagnetic GdFeCo”
Niklas Roschewsky and Charles Henri Lambert and Sayeef Salahuddin
Physical Review B, 2017.
|
| J89. |
“Electric current induced ultrafast demagnetization”
Richard B. Wilson and Yang Yang and Jon Gorchon and Charles Henri Lambert and Sayeef Salahuddin and Jeffrey Bokor
Physical Review B, 2017.
|
| J88. |
“Ultrafast magnetic switching of GdFeCo with electronic heat currents”
R. B. Wilson and Jon Gorchon and Yang Yang and Charles Henri Lambert and Sayeef Salahuddin and Jeffrey Bokor
Physical Review B, 2017.
|
| J87. |
“High Speed Epitaxial Perovskite Memory on Flexible Substrates”
Saidur R. Bakaul and Claudy R. Serrao and Oukjae Lee and Zhongyuan Lu and Ajay Yadav and Carlo Carraro and Roya Maboudian and Ramamoorthy Ramesh and Sayeef Salahuddin
Advanced Materials, 2017.
|
| J86. |
“Implementing p-bits With Embedded MTJ”
K Y Camsari and S Salahuddin and S Datta
IEEE Electron Device Letters, 38, 1767-1770, 2017.
|
| J85. |
“A Predictive Tunnel FET Compact Model With Atomistic Simulation Validation”
Y Lin and S Khandelwal and J P Duarte and H Chang and S Salahuddin and C Hu
IEEE Transactions on Electron Devices, 64, 599-605, 2017.
|
| C48. |
“In quest of the next information processing substrate”
S Datta and A Seabaugh and M Niemier and A Raychowdhury and D Schlom and D Jena and G Xing and H -. P Wong and E Pop and S Salahuddin and S Gupta and S Guha
2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC), 1-6, 2017.
|
| J84. |
“Compact Modeling Source-to-Drain Tunneling in Sub-10-nm GAA FinFET With Industry Standard Model”
Y Lin and J P Duarte and P Kushwaha and H Agarwal and H Chang and A Sachid and S Salahuddin and C Hu
IEEE Transactions on Electron Devices, 64, 3576-3581, 2017.
|
| C47. |
“Energy efficient computing with hyperdimensional vector space models”
S. Salahuddin
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 9-12, 2017.
|
| J83. |
“Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs”
Y Lin and P Kushwaha and H Agarwal and H Chang and J P Duarte and A B Sachid and S Khandelwal and S Salahuddin and C Hu
IEEE Transactions on Electron Devices, 64, 3986-3990, 2017.
|
| J82. |
“Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery”
K Chatterjee and S Kim and G Karbasian and A J Tan and A K Yadav and A I Khan and C Hu and S. Salahuddin
IEEE Electron Device Letters, 38, 1379-1382, 2017.
|
| J81. |
“Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET”
X Li and J Sampson and A Khan and K Ma and S George and A Aziz and S K Gupta and S Salahuddin and M Chang and S Datta and V Narayanan
IEEE Transactions on Electron Devices, 64, 3452-3458, 2017.
|
| J80. |
“Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics”
S Khandelwal and J P Duarte and A I Khan and S Salahuddin and C Hu
IEEE Electron Device Letters, 38, 142-144, 2017.
|
| J79. |
“Interface Engineering of Domain Structures in BiFeO3 Thin Films”
Deyang Chen and Zuhuang Chen and Qian He and James D Clarkson and Claudy R Serrao and Ajay K Yadav and Mark E Nowakowski and Zhen Fan and Long You and Xingsen Gao and Dechang Zeng and Lang Chen and Albina Y Borisevich and Sayeef Salahuddin and Jun-Ming Liu and Jeffrey Bokor
Nano Letters, 17, 486-493, 2017.
|
| J78. |
“Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors”
Felicia A McGuire and Yuh-Chen Lin and Katherine Price and G Bruce Rayner and Sourabh Khandelwal and Sayeef Salahuddin and Aaron D Franklin
Nano Letters, 17, 4801-4806, 2017.
|
| C46. |
“Ferroelectricity in HfO2 thin films as a function of Zr doping”
G Karbasian and A Tan and A Yadav and E M H Sorensen and C R Serrao and A I Khan and K Chatterjee and and and S. Salahuddin
2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 1-2, 2017.
|
| C45. |
“Full chip power benefits with negative capacitance FETs”
S K Samal and S Khandelwal and A I Khan and S Salahuddin and C Hu and S K Lim
2017 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED), 1-6, 2017.
|
| J77. |
“Intrinsic speed limit of negative capacitance transistors”
K Chatterjee and A J Rosner and S. Salahuddin
IEEE Electron Device Letters, 38, 1328-1330, 2017.
|
| J76. |
“Intrinsic Limits to Contact Resistivity in Transition Metal Dichalcogenides”
V Mishra and S. Salahuddin
IEEE Electron Device Letters, 38, 1755-1758, 2017.
|
| J75. |
“Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs”
A I Khan and U Radhakrishna and S Salahuddin and D Antoniadis
IEEE Electron Device Letters, 38, 1335-1338, 2017.
|
| C44. |
“Partial switching of ferroelectrics for synaptic weight storage”
E W Kinder and C Alessandri and P Pandey and G Karbasian and S Salahuddin and A Seabaugh
2017 75th Annual Device Research Conference (DRC), 1-2, 2017.
|
| C43. |
“Ultrafast electrical switching of ferrimagnetic metals (Conference Presentation)”
Richard Wilson and Yang Yang and Jon Gorchon and Charles-Henri Lambert and Sayeef Salahuddin and Jeffrey Bokor
Spintronics X, 10357, 41, 2017.
|
| J74. |
“Hidden Magnetic States Emergent Under Electric Field, In A Room Temperature Composite Magnetoelectric Multiferroic”
J. D. Clarkson and I. Fina and Z. Q. Liu and Y. Lee and J. Kim and C. Frontera and K. Cordero and S. Wisotzki and F. Sanchez and J. Sort and S. L. Hsu and C. Ko and L. Aballe and M. Foerster and J. Wu and H. M. Christen and J. T. Heron and D. G. Schlom and S. Salahuddin and N. Kioussis and J. Fontcuberta and X. Marti and R. Ramesh
Scientific Reports, 7, 15460, 2017.
|
| C42. |
“Accurate Modeling of Gate-Induced Drain Leakage for III-V Mosfets”
Sangwook Kim and Sayeef Salahuddin
Meeting Abstracts of ECS, MA2017-02, 2203-2203, 2017.
|
| J73. |
“Effect of magnetoelastic film thickness on power absorption in acoustically driven ferromagnetic resonance”
D. Labanowski and A. Jung and S. Salahuddin
Applied Physics Letters, 111, 102904, 2017.
|
|
2016
|
|
| J72. |
“Spin-orbit torques in ferrimagnetic GdFeCo alloys”
Niklas Roschewsky and Tomoya Matsumura and Suraj Cheema and Frances Hellman and Takeshi Kato and Satoshi Iwata and Sayeef Salahuddin
Applied Physics Letters, 109, 112403, 2016.
|
| J71. |
“Mechanical back-action of a spin-wave resonance in a magnetoelastic thin film on a surface acoustic wave”
P. G. Gowtham and D. Labanowski and S. Salahuddin
Physical Review B, 2016.
|
| J70. |
“Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2”
Michael Hoffmann and Milan Pešić and Korok Chatterjee and Asif I. Khan and Sayeef Salahuddin and Stefan Slesazeck and Uwe Schroeder and Thomas Mikolajick
Advanced Functional Materials, 2016.
|
| J69. |
“Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential ResistancePart II: Model Validation”
G Pahwa and T Dutta and A Agarwal and S Khandelwal and S Salahuddin and C Hu and Y S Chauhan
IEEE Transactions on Electron Devices, 63, 4986-4992, 2016.
|
| J68. |
“Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport”
S Khandelwal and H Agarwal and P Kushwaha and J P Duarte and A Medury and Y S Chauhan and S Salahuddin and C Hu
IEEE Electron Device Letters, 37, 134-137, 2016.
|
| J67. |
“Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor”
A I Khan and K Chatterjee and J P Duarte and Z Lu and A Sachid and S Khandelwal and R Ramesh and C Hu and S. Salahuddin
IEEE Electron Device Letters, 37, 111-114, 2016.
|
| C41. |
“Compact models of negative-capacitance FinFETs: Lumped and distributed charge models”
J P Duarte and S Khandelwal and A I Khan and A Sachid and Y Lin and H Chang and S Salahuddin and C Hu
2016 IEEE International Electron Devices Meeting (IEDM), 30.5.1-30.5.4, 2016.
|
| C40. |
“Nonvolatile memory design based on ferroelectric FETs”
S George and K Ma and A Aziz and X Li and A Khan and S Salahuddin and M Chang and S Datta and J Sampson and S Gupta and V Narayanan
2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC), 1-6, 2016.
|
| J66. |
“Negative Capacitance Behavior in a Leaky Ferroelectric”
A I Khan and U Radhakrishna and K Chatterjee and S Salahuddin and D A Antoniadis
IEEE Transactions on Electron Devices, 63, 4416-4422, 2016.
|
| J65. |
“Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential ResistancePart I: Model Description”
G Pahwa and T Dutta and A Agarwal and S Khandelwal and S Salahuddin and C Hu and Y S Chauhan
IEEE Transactions on Electron Devices, 63, 4981-4985, 2016.
|
| C39. |
“Circuit performance analysis of negative capacitance FinFETs”
S Khandelwal and A I Khan and J P Duarte and A B Sachid and S Salahuddin and C Hu
2016 IEEE Symposium on VLSI Technology, 1-2, 2016.
|
| C38. |
“Review of negative capacitance transistors”
S. Salahuddin
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 1, 2016.
|
| C37. |
“Capacitance matching effects in negative capacitnace field effect transistor”
J Jo and A I Khan and K Cho and S Oh and S Salahuddin and C Shin
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 174-175, 2016.
|
| J64. |
“Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics”
C Lin and A I Khan and S Salahuddin and C Hu
IEEE Transactions on Electron Devices, 63, 2197-2199, 2016.
|
| J63. |
“Deterministic Spin Orbit Torque Switching of a Perpendicularly Polarized Magnet Using Wedge Shape of the Magnet”
Debanjan Bhowmik and Sayeef Salahuddin
SPIN, 06, 1640008, 2016.
|
| C36. |
“Negative Capacitance Transistors”
Sayeef Salahuddin
Meeting Abstracts of ECS, MA2016-02, 1958-1958, 2016.
|
| J62. |
“Surface states in a monolayer MoS2 transistor”
Zhongyuan Lu and Oukjae Lee and Justin C. Wong and Sayeef Salahuddin
Journal of Materials Research, 31, 911-916, 2016.
|
| J61. |
“Power absorption in acoustically driven ferromagnetic resonance”
D. Labanowski and A. Jung and S. Salahuddin
Applied Physics Letters, 108, 022905, 2016.
|
| J60. |
“A 60-nm-thick enhancement mode In 0.65 Ga 0.35 As/InAs/In 0.65 Ga 0.35 As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications”
Faiz Aizad Fatah and Yueh-Chin Lin and Ren-Xuan Liu and Kai-Chun Yang and Tai-We Lin and Heng-Tung Hsu and Jung-Hsiang Yang and Yasuyuki Miyamoto and Hiroshi Iwai and Chenming Calvin Hu and Sayeef Salahuddin and Edward Yi Chang
Applied Physics Express, 9, 026502, 2016.
|
| J59. |
“Single crystal functional oxides on silicon”
Saidur Rahman Bakaul and Claudy Rayan Serrao and Michelle Lee and Chun Wing Yeung and Asis Sarker and Shang-Lin Hsu and Ajay Kumar Yadav and Liv Dedon and Long You and Asif Islam Khan and James David Clarkson and Chenming Hu and Ramamoorthy Ramesh and Sayeef Salahuddin
Nature Communications, 7, 10547, 2016.
|
|
2015
|
|
| J58. |
“Flexible spin-orbit torque devices”
OukJae Lee and Long You and Jaewon Jang and Vivek Subramanian and Sayeef Salahuddin
Applied Physics Letters, 107, 252401, 2015.
|
| J57. |
“Highly crystalline MoS2 thin films grown by pulsed laser deposition”
Claudy R. Serrao and Anthony M. Diamond and Shang-Lin Hsu and Long You and Sushant Gadgil and James Clarkson and Carlo Carraro and Roya Maboudian and Chenming Hu and Sayeef Salahuddin
Applied Physics Letters, 106, 052101, 2015.
|
| J56. |
“Large resistivity modulation in mixed-phase metallic systems”
Yeonbae Lee and Z. Q. Liu and J. T. Heron and J. D. Clarkson and J. Hong and C. Ko and M. D. Biegalski and U. Aschauer and S. L. Hsu and M. E. Nowakowski and J. Wu and H. M. Christen and S. Salahuddin and J. B. Bokor and N. A. Spaldin and D. G. Schlom and R. Ramesh
Nature Communications, 2015.
|
| J55. |
“Probing electric field control of magnetism using ferromagnetic resonance”
Ziyao Zhou and Morgan Trassin and Ya Gao and Yuan Gao and Diana Qiu and Khalid Ashraf and Tianxiang Nan and Xi Yang and S. R. Bowden and D. T. Pierce and M. D. Stiles and J. Unguris and Ming Liu and Brandon M. Howe and Gail J. Brown and S. Salahuddin and R. Ramesh and Nian X. Sun
Nature Communications, 2015.
|
| J54. |
“Screening in Ultrashort (5 nm) Channel MoS2Transistors: A Full-Band Quantum Transport Study”
V Mishra and S Smith and L Liu and F Zahid and Y Zhu and H Guo and S. Salahuddin
IEEE Transactions on Electron Devices, 62, 2457-2463, 2015.
|
| J53. |
“Modeling SiGe FinFETs With Thin Fin and Current-Dependent Source/Drain Resistance”
S Khandelwal and J P Duarte and A Medury and Y S Chauhan and S. Salahuddin and C Hu
IEEE Electron Device Letters, 36, 636-638, 2015.
|
| C35. |
“Sub-60mV-swing negative-capacitance FinFET without hysteresis”
K Li and P Chen and T Lai and C Lin and C Cheng and C Chen and Y Wei and Y Hou and M Liao and M Lee and M Chen and J Sheih and W Yeh and F Yang and S Salahuddin and C Hu
2015 IEEE International Electron Devices Meeting (IEDM), 22.6.1-22.6.4, 2015.
|
| C34. |
“Understanding negative capacitance dynamics in ferroelectric capacitors”
A I Khan and K Chatterjee and R Ramesh and S. Salahuddin
2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-3, 2015.
|
| J52. |
“Voltage-Controlled Ferroelastic Switching in Pb(Zr0.2Ti0.8)O3 Thin Films”
Asif Islam Khan and Xavier Marti and Claudy Serrao and Ramamoorthy Ramesh and Sayeef Salahuddin
Nano Letters, 15, 2229-2234, 2015.
|
| C33. |
“0.2V adiabatic NC-FinFET with 0.6mA/mu-m IONand 0.1nA/mu-m IOFF”
C Hu and S. Salahuddin and C Lin and A Khan
2015 73rd Annual Device Research Conference (DRC), 39-40, 2015.
|
| C32. |
“Negative capacitance in ferroelectric materials and implications for steep transistors”
A Khan and S. Salahuddin
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 1-3, 2015.
|
| J51. |
“Direct optical detection of current induced spin accumulation in metals by magnetization-induced second harmonic generation”
A. Pattabi and Z. Gu and J. Gorchon and Y. Yang and J. Finley and O. J. Lee and H. A. Raziq and S. Salahuddin and J. Bokor
Applied Physics Letters, 107, 152404, 2015.
|
| J50. |
“Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque”
Debanjan Bhowmik and Mark E. Nowakowski and Long You and OukJae Lee and David Keating and Mark Wong and Jeffrey Bokor and Sayeef Salahuddin
Scientific Reports, 5, 11823, 2015.
|
| J49. |
“Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy.”
Long You and OukJae Lee and Debanjan Bhowmik and Dominic Labanowski and Jeongmin Hong and Jeffrey Bokor and Sayeef Salahuddin
Proceedings of the National Academy of Sciences of the United States of America, 112, 10310-5, 2015.
|
| J48. |
“Negative capacitance in a ferroelectric capacitor”
Asif Islam Khan and Korok Chatterjee and Brian Wang and Steven Drapcho and Long You and Claudy Serrao and Saidur Rahman Bakaul and Ramamoorthy Ramesh and Sayeef Salahuddin
Nature Materials, 14, 182-186, 2015.
|
|
2014
|
|
| J47. |
“The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(Zr 0.2 Ti 0.8 )TiO 3 thin films”
Asif Islam Khan and Pu Yu and Morgan Trassin and Michelle J. Lee and Long You and Sayeef Salahuddin
Applied Physics Letters, 105, 022903, 2014.
|
| J46. |
“Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer”
J. Wang and L. S. Xie and C. S. Wang and H. Z. Zhang and L. Shu and J. Bai and Y. S. Chai and X. Zhao and J. C. Nie and C. B. Cao and C. Z. Gu and C. M. Xiong and Y. Sun and J. Shi and S. Salahuddin and K. Xia and C. W. Nan and J. X. Zhang
Physical Review B – Condensed Matter and Materials Physics, 2014.
|
| J45. |
“Spin hall effect clocking of nanomagnetic logic without a magnetic field”
Debanjan Bhowmik and Long You and Sayeef Salahuddin
Nature Nanotechnology, 2014.
|
| J44. |
“Deterministic switching of ferromagnetism at room temperature using an electric field”
J. T. Heron and J. L. Bosse and Q. He and Y. Gao and M. Trassin and L. Ye and J. D. Clarkson and C. Wang and Jian Liu and S. Salahuddin and D. C. Ralph and D. G. Schlom and J. Íñiguez and B. D. Huey and R. Ramesh
Nature, 2014.
|
| J43. |
“Room-temperature antiferromagnetic memory resistor”
X. Marti and I. Fina and C. Frontera and Jian Liu and P. Wadley and Q. He and R. J. Paull and J. D. Clarkson and J. Kudrnovskà and I. Turek and J. Kuneš and D. Yi and J. H. Chu and C. T. Nelson and L. You and E. Arenholz and S. Salahuddin and J. Fontcuberta and T. Jungwirth and R. Ramesh
Nature Materials, 2014.
|
| C31. |
“Negative capacitance in ferroelectric materials and its potential use for transistors with lt;60 mV/decade subthreshold swing”
A I Khan and S Salahuddin
2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014.
|
| J42. |
“Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure”
Weiwei Gao and Asif Khan and Xavi Marti and Chris Nelson and Claudy Serrao and Jayakanth Ravichandran and Ramamoorthy Ramesh and Sayeef Salahuddin
Nano Letters, 14, 5814-5819, 2014.
|
| J41. |
“Real-Time Observation of Local Strain Effects on Nonvolatile Ferroelectric Memory Storage Mechanisms”
Christopher R Winkler and Michael L Jablonski and Khalid Ashraf and Anoop R Damodaran and Karthik Jambunathan and James L Hart and Jianguo G Wen and Dean J Miller and Lane W Martin and Sayeef Salahuddin and Mitra L Taheri
Nano Letters, 14, 3617-3622, 2014.
|
| J40. |
“Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer”
T Hsieh and E Y Chang and Y Song and Y Lin and H Wang and S Liu and S Salahuddin and C C Hu
IEEE Electron Device Letters, 35, 732-734, 2014.
|
| C30. |
“Can piezoelectricity lead to negative capacitance?”
J C Wong and S Salahuddin
2014 IEEE International Electron Devices Meeting, 13.5.1-13.5.4, 2014.
|
| J39. |
“Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs WithIn SituPEALD-AlN Interfacial Passivation Layer”
Q H Luc and E Y Chang and H D Trinh and Y C Lin and H Q Nguyen and Y Y Wong and H B Do and S Salahuddin and C C Hu
IEEE Transactions on Electron Devices, 61, 2774-2778, 2014.
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|
2013
|
|
| J38. |
“Phenomenological Compact Model for QM Charge Centroid in Multigate FETs”
S Venugopalan and M A Karim and S Salahuddin and A M Niknejad and C C Hu
IEEE Transactions on Electron Devices, 60, 1480-1484, 2013.
|
| C29. |
“Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs”
C W Yeung and A I Khan and S Salahuddin and C Hu
2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-2, 2013.
|
| J37. |
“Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications”
K Ganapathi and Y Yoon and M Lundstrom and S Salahuddin
IEEE Transactions on Electron Devices, 60, 958-964, 2013.
|
| C28. |
“Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit”
V Mishra and S Smith and K Ganapathi and S Salahuddin
2013 IEEE International Electron Devices Meeting, 5.6.1-5.6.4, 2013.
|
| J36. |
“Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene”
Sheneve Z Butler and Shawna M Hollen and Linyou Cao and Yi Cui and Jay A Gupta and Humberto R Gutiérrez and Tony F Heinz and Seung Sae Hong and Jiaxing Huang and Ariel F Ismach and Ezekiel Johnston-Halperin and Masaru Kuno and Vladimir V Plashnitsa and Richard D Robinson and Rodney S Ruoff and Sayeef Salahuddin and Jie Shan and Li Shi and Michael G Spencer and Mauricio Terrones and Wolfgang Windl and Joshua E Goldberger
ACS Nano, 7, 2898-2926, 2013.
|
| C27. |
“Low power negative capacitance FETs for future quantum-well body technology”
C W Yeung and A I Khan and A Sarker and S Salahuddin and C Hu
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 1-2, 2013.
|
| C26. |
“Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs”
Chun Wing Yeung and Asif I. Khan and Sayeef Salahuddin and Chenming Hu
2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-2, 2013.
|
| J35. |
“Electrothermal analysis of spin-transfer-torque random access memory arrays”
Subho Chatterjee and Sayeef Salahuddin and Satish Kumar and Saibal Mukhopadhyay
ACM Journal on Emerging Technologies in Computing Systems, 9, 1-17, 2013.
|
| J34. |
“High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector”
Mohammad R. Esmaeili-Rad and Sayeef Salahuddin
Scientific Reports, 3, 2345, 2013.
|
|
2012
|
|
| J33. |
“Effect of anti-ferromagnet surface moment density on the hysteresis properties of exchange coupled antiferromagnet-ferromagnet systems: The case of bismuth-ferrite”
Khalid Ashraf and Sayeef Salahuddin
Journal of Applied Physics, 111, 103904, 2012.
|
| J32. |
“Zener tunneling: Congruence between semi-classical and quantum ballistic formalisms”
Kartik Ganapathi and Sayeef Salahuddin
Journal of Applied Physics, 111, 124506, 2012.
|
| J31. |
“Dissipative transport in rough edge graphene nanoribbon tunnel transistors”
Youngki Yoon and Sayeef Salahuddin
Applied Physics Letters, 101, 263501, 2012.
|
| J30. |
“Phase field model of domain dynamics in micron scale, ultrathin ferroelectric films: Application for multiferroic bismuth ferrite”
Khalid Ashraf and Sayeef Salahuddin
Journal of Applied Physics, 112, 074102, 2012.
|
| J29. |
“Non-volatile spin switch for Boolean and non-Boolean logic”
Supriyo Datta and Sayeef Salahuddin and Behtash Behin-Aein
Applied Physics Letters, 101, 252411, 2012.
|
| C25. |
“Electric field induced magnetic switching at room temperature: Switching speed, device scaling and switching energy”
K Ashraf and S Smith and S. Salahuddin
2012 International Electron Devices Meeting, 26.5.1-26.5.4, 2012.
|
| C24. |
“Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?”
K Ganapathi and M Lundstrom and S. Salahuddin
70th Device Research Conference, 85-86, 2012.
|
| J28. |
“Impact of Self-Heating on Reliability of a Spin-Torque-Transfer RAM Cell”
S Chatterjee and S. Salahuddin and S Kumar and S Mukhopadhyay
IEEE Transactions on Electron Devices, 59, 791-799, 2012.
|
| J27. |
“Dense Electron System from Gate-Controlled Surface Metal-Insulator Transition”
Kai Liu and Deyi Fu and Jinbo Cao and Joonki Suh and Kevin X Wang and Chun Cheng and D Frank Ogletree and Hua Guo and Shamashis Sengupta and Asif Khan and Chun Wing Yeung and Sayeef Salahuddin and Mandar M Deshmukh and Junqiao Wu
Nano Letters, 12, 6272-6277, 2012.
|
| C23. |
“Possible route to low current, high speed, dynamic switching in a perpendicular anisotropy CoFeB-MgO junction using Spin Hall Effect of Ta”
D Bhowmik and L You and S. Salahuddin
2012 International Electron Devices Meeting, 29.7.1-29.7.4, 2012.
|
| J26. |
“Voltage Asymmetry of Spin-Transfer Torques”
D Datta and B Behin-Aein and S Datta and S. Salahuddin
IEEE Transactions on Nanotechnology, 11, 261-272, 2012.
|
| C22. |
“Negative capacitance in a ferroelectric-dielectric heterostructure for ultra low-power computing”
Sayeef Salahuddin
Proceedings of SPIE, 8461, 846111, 2012.
|
| C21. |
“Non-hysteretic Negative Capacitance FET with Sub-30mV/dec Swing over 106X Current Range and ION of 0.3 mA/μm without Strain Enhancement at 0.3 V”
CW Yeung and AI Khan and J-Y Cheng and Sayeef Salahuddin and C Hu
SISPAD, 257-259, 2012.
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|
2011
|
|
| J25. |
“Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green’s function method with real space approach”
Youngki Yoon and Dmitri E. Nikonov and Sayeef Salahuddin
Applied Physics Letters, 98, 203503, 2011.
|
| J24. |
“Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures”
Asif Islam Khan and Debanjan Bhowmik and Pu Yu and Sung Joo Kim and Xiaoqing Pan and Ramamoorthy Ramesh and Sayeef Salahuddin
Applied Physics Letters, 99, 113501, 2011.
|
| J23. |
“Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure”
J. T. Heron and M. Trassin and K. Ashraf and M. Gajek and Q. He and S. Y. Yang and D. E. Nikonov and Y. H. Chu and S. Salahuddin and R. Ramesh
Physical Review Letters, 2011.
|
| J22. |
“Built-in and induced polarization across LaAlO3/SrTiO3heterojunctions”
Guneeta Singh-Bhalla and Christopher Bell and Jayakanth Ravichandran and Wolter Siemons and Yasuyuki Hikita and Sayeef Salahuddin and Arthur F. Hebard and Harold Y. Hwang and Ramamoorthy Ramesh
Nature Physics, 2011.
|
| J21. |
“Built-in and induced polarization across LaAlO3/SrTiO3heterojunctions”
Guneeta Singh-Bhalla and Christopher Bell and Jayakanth Ravichandran and Wolter Siemons and Yasuyuki Hikita and Sayeef Salahuddin and Arthur F. Hebard and Harold Y. Hwang and Ramamoorthy Ramesh
Nature Physics, 2011.
|
| C20. |
“Scaling study of graphene transistors”
Y Yoon and D E Nikonov and S. Salahuddin
2011 11th IEEE International Conference on Nanotechnology, 1568-1571, 2011.
|
| C19. |
“Performance assessment of partially unzipped carbon nanotube field-effect transistors”
Y Yoon and S. Salahuddin
2011 IEEE/ACM International Symposium on Nanoscale Architectures, 157-161, 2011.
|
| C18. |
“Ferroelectric negative capacitance MOSFET: Capacitance tuning amp; antiferroelectric operation”
A I Khan and C W Yeung and and S. Salahuddin
2011 International Electron Devices Meeting, 11.3.1-11.3.4, 2011.
|
| J20. |
“Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current”
K Ganapathi and S. Salahuddin
IEEE Electron Device Letters, 32, 689-691, 2011.
|
| C17. |
“Proposal for piezoelectric-ferromagnet bilayer based microwave oscillators without any external magnetic field or spin transfer torque”
D Bhowmik and S. Salahuddin
69th Device Research Conference, 163-164, 2011.
|
| J19. |
“How Good Can Monolayer MoS2 Transistors Be?”
Youngki Yoon and Kartik Ganapathi and Sayeef Salahuddin
Nano Letters, 11, 3768-3773, 2011.
|
| C16. |
“Monolayer MoS2transistors – ballistic performance limit analysis”
K Ganapathi and Y Yoon and S. Salahuddin
69th Device Research Conference, 79-80, 2011.
|
| C15. |
“Simulation of Carbon Heterostructures as Barrier Free Tunneling Transistors”
Youngki Yoon and Sayeef Salahuddin
ECS Transactions, 35, 253-258, 2011.
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2010
|
|
| J18. |
“Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors”
Youngki Yoon and Sayeef Salahuddin
Applied Physics Letters, 96, 013510, 2010.
|
| J17. |
“Barrier-free tunneling in a carbon heterojunction transistor”
Youngki Yoon and Sayeef Salahuddin
Applied Physics Letters, 97, 033102, 2010.
|
| J16. |
“Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance”
Kartik Ganapathi and Youngki Yoon and Sayeef Salahuddin
Applied Physics Letters, 97, 033504, 2010.
|
| J15. |
“Performance analysis of carbon-based tunnel field-effect transistors for high frequency and ultralow power applications”
Youngki Yoon and Sung Hwan Kim and Sayeef Salahuddin
Applied Physics Letters, 97, 233504, 2010.
|
| J14. |
“Proposal for an all-spin logic device with built-in memory”
Behtash Behin-Aein and Deepanjan Datta and Sayeef Salahuddin and Supriyo Datta
Nature Nanotechnology, 2010.
|
| J13. |
“Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors”
Hyunhyub Ko and Kuniharu Takei and Rehan Kapadia and Steven Chuang and Hui Fang and Paul W. Leu and Kartik Ganapathi and Elena Plis and Ha Sul Kim and Szu Ying Chen and Morten Madsen and Alexandra C. Ford and Yu Lun Chueh and Sanjay Krishna and Sayeef Salahuddin and Ali Javey
Nature, 2010.
|
| C14. |
“Quantitative model for TMR and spin-transfer torque in MTJ devices”
D Datta and B Behin-Aein and S. Salahuddin and S Datta
2010 International Electron Devices Meeting, 22.8.1-22.8.4, 2010.
|
| C13. |
“Structure and doping effects in carbon heterojunction FETs towards barrier-free inter-band tunneling”
Y Yoon and S. Salahuddin
68th Device Research Conference, 215-216, 2010.
|
| C12. |
“Analysis of thermal behaviors of Spin-Torque-Transfer RAM: A simulation study”
S Chatterjee and S. Salahuddin and S Kumar and S Mukhopadhyay
2010 ACM/IEEE International Symposium on Low-Power Electronics and Design (ISLPED), 13-18, 2010.
|
| C11. |
“Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors”
K Ganapathi and Y Yoon and S. Salahuddin
68th Device Research Conference, 57-58, 2010.
|
| J12. |
“Dual-Source-Line-Bias Scheme to Improve the Read Margin and Sensing Accuracy of STTRAM in Sub-90-nm Nodes”
S Chatterjee and S. Salahuddin and S Mukhopadhyay
IEEE Transactions on Circuits and Systems II: Express Briefs, 57, 208-212, 2010.
|
| J11. |
“Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective”
J Li and P Ndai and A Goel and S. Salahuddin and K Roy
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 18, 1710-1723, 2010.
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|
2009
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|
| C10. |
“Modeling of the self-heating in STTRAM and analysis of its impact on reliable memory operations”
S Chatterjee and S. Salahuddin and S Kumar and S Mukhopadhyay
2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS), 86-89, 2009.
|
| J10. |
“Switching Energy of Ferromagnetic Logic Bits”
B Behin-Aein and S. Salahuddin and S Datta
IEEE Transactions on Nanotechnology, 8, 505-514, 2009.
|
|
2008
|
|
| C9. |
“Variation-tolerant Spin-Torque Transfer (STT) MRAM array for yield enhancement”
J Li and and S. Salahuddin and K Roy
2008 IEEE Custom Integrated Circuits Conference, 193-196, 2008.
|
| C8. |
“Can the subthreshold swing in a classical FET be lowered below 60 mV/decade?”
S. Salahuddin and S Datta
2008 IEEE International Electron Devices Meeting, 1-4, 2008.
|
| C7. |
“Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement”
J Li and C Augustine and S. Salahuddin and K Roy
2008 45th ACM/IEEE Design Automation Conference, 278-283, 2008.
|
| J9. |
“Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices”
Sayeef Salahuddin and Supriyo Datta
Nano Letters, 8, 405-410, 2008.
|
| C6. |
“Key Role of Non Equilibrium Spin Density in Determining Spin Torque”
S. Salahuddin and D Datta and S Datta
2008 Device Research Conference, 161-162, 2008.
|
|
2007
|
|
| J8. |
“Interacting systems for self-correcting low power switching”
Sayeef Salahuddin and Supriyo Datta
Applied Physics Letters, 90, 093503, 2007.
|
| C5. |
“Simulation of Spin Torque Devices with Inelastic Spin flip Scattering”
S. Salahuddin and S Datta
2007 65th Annual Device Research Conference, 249-250, 2007.
|
| C4. |
“Quantum Transport Simulation of Tunneling Based Spin Torque Transfer (STT) Devices: Design Trade offs and Torque Efficiency”
S. Salahuddin and D Datta and P Srivastava and S Datta
2007 IEEE International Electron Devices Meeting, 121-124, 2007.
|
|
2006
|
|
| J7. |
“Self-consistent simulation of quantum transport and magnetization dynamics in spin-torque based devices”
Sayeef Salahuddin and Supriyo Datta
Applied Physics Letters, 89, 153504, 2006.
|
| J6. |
“Electrical detection of spin excitations”
Sayeef Salahuddin and Supriyo Datta
Physical Review B – Condensed Matter and Materials Physics, 2006.
|
| J5. |
“High-frequency performance projections for ballistic carbon-nanotube transistors”
S Hasan and S. Salahuddin and M Vaidyanathan and M A Alam
IEEE Transactions on Nanotechnology, 5, 14-22, 2006.
|
| C3. |
“An All Electrical Spin Detector”
S. Salahuddin and S Datta
2006 Sixth IEEE Conference on Nanotechnology, 2, 834-837, 2006.
|
| C2. |
“Integrating Spintronics with Conventional Semiconductor Devices through Exchange Interaction”
S. Salahuddin and P Srivastava and S Datta
2006 64th Device Research Conference, 233-234, 2006.
|
| C1. |
“Self-Consistent Simulation of Hybrid Spintronic Devices”
S. Salahuddin and S Datta
2006 International Electron Devices Meeting, 1-4, 2006.
|
|
2005
|
|
| J4. |
“Transport effects on signal propagation in quantum wires”
S. Salahuddin and M Lundstrom and S Datta
IEEE Transactions on Electron Devices, 52, 1734-1742, 2005.
|
|
2004
|
|
| J3. |
“A modified a priori SNR for speech enhancement using spectral subtraction rules”
M K Hasan and S. Salahuddin and M R Khan
IEEE Signal Processing Letters, 11, 450-453, 2004.
|
| J2. |
“Reducing signal-bias from MAD estimated noise level for DCT speech enhancement”
Md Kamrul Hasan and Sayeef Salahuddin and M. Rezwan Khan
Signal Processing, 2004.
|
|
2002
|
|
| J1. |
“Soft thresholding for DCT speech enhancement”
S. Salahuddin and S Z Al Islam and Md K Hasan and M R Khan
Electronics letters, 2002.
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