OUR IMPACT
Scientific contributions to the field
Titanium dioxide is normally a dielectric, but in films with thicknesses below 3 nanometers, it forms a ferroelectric phase by breaking structural inversion symmetry.
A hardware-efficient Ising machine that natively supports integer-state optimization, achieving 98%+ accuracy on combinatorial problems with up to 20,000 nodes while outperforming traditional QUBO-based methods.
Demonstrates negative capacitance effects in HfO2-ZrO2 gate stacks with 5nm channels, achieving 60mV/decade subthreshold swing and unique negative DIBL that significantly alleviates short-channel effects beyond conventional dielectrics.